## [Solved] Which of the following is not a characteristic of UJT?

Which of the following is not a characteristic of UJT? A. Intrinsic stand off ratio B. Negative resistance C. Peak-point voltage D. Bilateral conduction Answer: Bilateral conduction Explanation: Bilateral conduction is not a characteristic of UJT

## [Solved] A diac is turned on by ____ (MCQ)

A diac is turned on by ____ A. A breakover voltage B. Gate voltage C. Gate current D. None of the above Answer: A breakover voltage Explanation: A diac is turned on by a breakover voltage.

## When the temperature increases, the inter-base resistance (RBB) of a UJT ____

When the temperature increases, the inter-base resistance (RBB) of a UJT ____ A. Increases B. Decreases C. Remains the same D. None of the above Answer: Increases Explanation: When the temperature increases, the inter-base resistance (RBB) of a UJT Increases

## [Solved] When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ____

When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ____ A. High B. Low C. Extremely low D. None of the above Answer: High Explanation: When the emitter terminal of a UJT is open, the resistance between the base terminal is generally high.

## [Solved] A triac has ____ semiconductor layers (MCQ)

A triac has ____ semiconductor layers A. Two B. Three C. Four D. Five Answer: Four Explanation: A triac has four semiconductor layers.

## [Solved] The device that does not have the gate terminal is ____ (MCQ)

The device that does not have the gate terminal is ____ A. Triac B. FET C. SCR D. Diac Answer: Diac Explanation: The device that does not have the gate terminal is Diac.

## [Solved] In a UJT, the p-type emitter is ____ doped (MCQ)

In a UJT, the p-type emitter is ____ doped. A. Lightly B. Heavily C. Moderately D. None of the above Answer: Heavily Explanation: In a UJT, the p-type emitter is Heavily doped.

## [Solved] Between the peak point and the valley point of UJT emitter characteristics we have ____ region.

Between the peak point and the valley point of UJT emitter characteristics we have ____ region. A. Saturation B. Negative resistance C. Cut-off D. None of the above Answer: Negative resistance Explanation: Between the peak point and the valley point of UJT emitter characteristics we have a negative resistance region.

## [Solved] After peak point, the UJT operates in the ____ region (MCQ)

After peak point, the UJT operates in the ____ region. A. Cut-off B. Saturation C. Negative resistance D. None of the above Answer: Negative resistance Explanation: After peak point, the UJT operates in the Negative resistance region.

## [Solved] The unit of electrical resistance is ____ (MCQ)

The unit of electrical resistance is A. Volt B. Amp C. Ohm D. Coulomb Answer: Ohm Explanation: The unit of electrical resistance is Ohm.